一般
| Rds On (Max) @ Id, Vgs | 650mOhm @ 3.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 434 pF @ 100 V |
| メーカー | Alpha & Omega Semiconductor Inc. |
| 実装タイプ | Through Hole |
| Product Status | Obsolete |
| シリーズ | aMOS™ |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |