Yangzhou Yangjie Electronic Technology Co.,Ltd
P-CH MOSFET 30V 40A DFN3333-8L
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 13mOhm @ 20A, 20V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 40.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2152 pF @ 15 V |
| Hersteller | Yangzhou Yangjie Electronic Technology Co.,Ltd |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 20V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Max. Verlustleistung | 32W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Hersteller-Gehäuse | 8-DFN (3.3x3.3) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|