Yangzhou Yangjie Electronic Technology Co.,Ltd
P-CH MOSFET 20V 16A DFN2020-6L-E
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 19mOhm @ 10A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 72.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2992 pF @ 10 V |
| Hersteller | Yangzhou Yangjie Electronic Technology Co.,Ltd |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Max. Verlustleistung | 18W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 6-UDFN Exposed Pad |
| Hersteller-Gehäuse | 6-DFN (2x2) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|