Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 100V 60A PDFN5060-8L
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 20A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2431 pF @ 50 V |
| Hersteller | Yangzhou Yangjie Electronic Technology Co.,Ltd |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Max. Verlustleistung | 88W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerLDFN |
| Hersteller-Gehäuse | 8-PDFN (5x6) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|