Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 9.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 15 V |
| Hersteller | YAGEO XSEMI |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | XP3N9R5A |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 38.7A (Tc) |
| Max. Verlustleistung | 3.57W (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerDFN |
| Hersteller-Gehäuse | PMPAK® 3 x 3 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|