Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 160 nC |
|---|---|
| IGBT Type | Trench Field Stop |
| Eingangstyp | Standard |
| Hersteller | WeEn Semiconductors |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 105 ns |
| Switching Energy | 1.7mJ (on), 600µJ (off) |
| Td (on/off) @ 25°C | 66ns/163ns |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
|---|---|
| Current - Collector (Ic) (Max) | 91 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 278 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247-3 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|