Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V |
|---|---|
| Basis-Teilenummer | TP0610 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 15 V |
| Hersteller | Vishay Siliconix |
| Montageart | Through Hole |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Obsolet |
| Serie | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 270mA (Ta) |
| Max. Verlustleistung | 800mW (Ta) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
|---|---|
| Hersteller-Gehäuse | TO-226AA (TO-92) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|