Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 16mOhm @ 20A, 10V |
|---|---|
| Basis-Teilenummer | SUM50 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1325 pF @ 25 V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Max. Verlustleistung | 3.7W (Ta), 93W (Tc) |
| Gehäuse | Cut Tape (CT) |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Hersteller-Gehäuse | TO-263 (D²Pak) |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|