Allgemein
| Rds On (Max) @ Id, Vgs | 52mOhm @ 32A, 10V |
|---|---|
| Basis-Teilenummer | SQW61 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 344 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7379 pF @ 100 V |
| Hersteller | Vishay Siliconix |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | Automotive, AEC-Q101, E |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |