Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 109mOhm @ 16.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 173 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3972 pF @ 100 V |
| Hersteller | Vishay Siliconix |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | E |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Max. Verlustleistung | 375W (Tc) |
| Gehäuse | Bulk |
|---|
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Qualification | AEC-Q101 |