Allgemein
| Rds On (Max) @ Id, Vgs | 2.53mOhm @ 10A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3111 pF @ 25 V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount, Wettable Flank |
| Product Status | Active |
| Serie | Automotive, AEC-Q101, TrenchFET® Gen IV |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |