Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 5A, 10V |
|---|---|
| Konfiguration | 2 N-Channel |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7300pF @ 25V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 40V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Power - Max | 75W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | PowerPAK® 8 x 8 Dual |
| Hersteller-Gehäuse | PowerPAK® 8 x 8 Dual |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Qualification | AEC-Q101 |