Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V |
|---|---|
| Konfiguration | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V, 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650pF @ 25V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 60V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc), 18A (Tc) |
| Power - Max | 34W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | PowerPAK® SO-8 Dual |
| Hersteller-Gehäuse | PowerPAK® SO-8 Dual |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Qualification | AEC-Q101 |