Allgemein
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 19A, 10V |
|---|---|
| Basis-Teilenummer | SIZ710 |
| Konfiguration | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 820pF @ 10V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Last Time Buy |
| Serie | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |