Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 21.1A, 10V |
|---|---|
| Basis-Teilenummer | SISH110 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchFET® Gen II |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta) |
| Max. Verlustleistung | 1.5W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | PowerPAK® 1212-8SH |
| Hersteller-Gehäuse | PowerPAK® 1212-8SH |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|