SIRC18DP-T1-GE3

Name: SIRC18DP-T1-GE3
Brand: Vishay Siliconix

Analog & Leistungselektronik

MOSFET N-CH 30V 60A PPAK SO-8

AktivPowerPAK® SO-8Analog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	1.1mOhm @ 15A, 10V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5060 pF @ 15 V
Hersteller	Vishay Siliconix
Montageart	Surface Mount
Product Status	Active
Serie	TrenchFET® Gen IV
Technologie	MOSFET (Metal Oxide)
Vgs (Max)	+20V, -16V
Vgs(th) (Max) @ Id	2.4V @ 250µA

Drain-Source-Spannung	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Max. Verlustleistung	54.3W (Tc)

Betriebstemperatur	-55°C~150°C(TJ)