Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.75Ohm @ 1A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 100 V |
| Hersteller | Vishay Siliconix |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | E |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 800 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Max. Verlustleistung | 62.5W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Hersteller-Gehäuse | TO-251AA |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|