Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 20A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 167 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8900 pF @ 20 V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchFET® Gen IV |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | +20V, -16V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Drain-Source-Spannung | 45 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 51A (Ta), 208A (Tc) |
| Max. Verlustleistung | 6.25W (Ta), 104W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | PowerPAK® SO-8 |
| Hersteller-Gehäuse | PowerPAK® SO-8DC |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|