Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 20A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2850 pF @ 50 V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchFET® Gen V |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 28.2A (Ta), 126A (Tc) |
| Max. Verlustleistung | 7.5W (Ta), 150W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | PowerPAK® SO-8 |
| Hersteller-Gehäuse | PowerPAK® SO-8DC |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|