Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 60mOhm @ 5.2A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.82 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 562 pF @ 6 V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 12 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Max. Verlustleistung | 2.45W (Ta), 13.1W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | PowerPAK® SC-75-6 |
| Hersteller-Gehäuse | PowerPAK® SC-75-6 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|