Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 21mOhm @ 5.8A, 4.5V |
|---|---|
| Basis-Teilenummer | SI6913 |
| Konfiguration | 2 P-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 4.5V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 900mV @ 400µA |
| Drain-Source-Spannung | 12V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) |
| Power - Max | 830mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Hersteller-Gehäuse | 8-TSSOP |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|