SI4850BDY-T1-GE3

Name: SI4850BDY-T1-GE3
Brand: Vishay Siliconix

Analog & Leistungselektronik

MOSFET N-CH 60V 8.4A/11.3A 8SO

Aktiv8-SOIC (0.154", 3.90mm Width)Analog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	19.5mOhm @ 10A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	790 pF @ 30 V
Hersteller	Vishay Siliconix
Montageart	Surface Mount
Verpackung	Tape & Reel (TR) Cut Tape (CT)
Teilestatus	Aktiv
Serie	TrenchFET® Gen IV
Technologie	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.8V @ 250µA

Drain-Source-Spannung	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	8.4A (Ta), 11.3A (Tc)
Max. Verlustleistung	2.5W (Ta), 4.5W (Tc)

Package / Case	8-SOIC (0.154", 3.90mm Width)
Hersteller-Gehäuse	8-SO

Betriebstemperatur	-55°C ~ 150°C (TJ)