SI4774DY-T1-GE3

Name: SI4774DY-T1-GE3
Brand: Vishay Siliconix

Analog & Leistungselektronik

MOSFET N-CHANNEL 30V 16A 8SO

Obsolet8-SOIC (0.154", 3.90mm Width)Analog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	9.5mOhm @ 10A, 10V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1025 pF @ 15 V
Hersteller	Vishay Siliconix
Montageart	Surface Mount
Verpackung	Tape & Reel (TR) Cut Tape (CT)
Teilestatus	Obsolet
Serie	SkyFET®, TrenchFET®
Technologie	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.3V @ 1mA

Drain-Source-Spannung	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Max. Verlustleistung	5W (Tc)

Package / Case	8-SOIC (0.154", 3.90mm Width)
Hersteller-Gehäuse	8-SOIC

Betriebstemperatur	-55°C ~ 150°C (TA)