Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.61Ohm @ 900mA, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 50 V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 950mA (Tc) |
| Max. Verlustleistung | 2W (Ta), 3.2W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Hersteller-Gehäuse | 6-TSOP |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|