Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 89mOhm @ 1.5A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 833 pF @ 20 V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Serie | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta), 13A (Tc) |
| Max. Verlustleistung | 2W (Ta), 4.2W (Tc) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
|---|---|
| Hersteller-Gehäuse | 6-TSOP |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|