Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2.7A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 20 V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchFET® Gen III |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta), 3.6A (Tc) |
| Max. Verlustleistung | 1W (Ta), 1.7W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | SOT-23-3 (TO-236) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|