Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.1A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 4 V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Drain-Source-Spannung | 8 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Max. Verlustleistung | 960mW (Ta), 1.7W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | SOT-23-3 (TO-236) |
| Betriebstemperatur | -50°C~150°C(TJ) |
|---|