Allgemein
| Rds On (Max) @ Id, Vgs | 390mOhm @ 1A, 4.5V |
|---|---|
| Basis-Teilenummer | SI1965 |
| Konfiguration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 6V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |