Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 122mOhm @ 1.2A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.45 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 4 V |
| Hersteller | Vishay Siliconix |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 8 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Max. Verlustleistung | 236mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-563, SOT-666 |
| Hersteller-Gehäuse | SC-89 (SOT-563F) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|