Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 210mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
| Hersteller | Vishay Siliconix |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Obsolet |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 400 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 490mA (Ta) |
| Max. Verlustleistung | 1W (Ta) |
| Package / Case | 4-DIP (0.300", 7.62mm) |
|---|---|
| Hersteller-Gehäuse | 4-HVMDIP |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|