Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2.2A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
| Hersteller | Vishay Siliconix |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Max. Verlustleistung | 3.1W (Ta), 74W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Hersteller-Gehäuse | TO-262-3 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|