Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 250Ohm @ 100µA, 20V |
|---|---|
| Basis-Teilenummer | 3N163 |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 3.5 pF @ 15 V |
| Hersteller | Vishay Siliconix |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 10µA |
| Drain-Source-Spannung | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 50mA (Ta) |
| Max. Verlustleistung | 375mW (Ta) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Hersteller-Gehäuse | TO-72 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|