Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
|---|---|
| Basis-Teilenummer | 2N6661 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| Hersteller | Vishay Siliconix |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain-Source-Spannung | 90 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) |
| Max. Verlustleistung | 725mW (Ta), 6.25W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Hersteller-Gehäuse | TO-39 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|