Vishay General Semiconductor - Diodes Division
DIODE SCHOTT 100V 2.1A SLIMSMAW
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | S8D3 |
|---|---|
| Capacitance @ Vr, F | 340pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Serie | eSMP®, TMBS® |
| Technologie | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 550 mV @ 1.5 A |
| Current - Average Rectified (Io) | 2.1A |
| Current - Reverse Leakage @ Vr | 200 µA @ 100 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-221AC, SMA Flat Leads |
|---|---|
| Hersteller-Gehäuse | SlimSMAW (DO-221AD) |
| Operating Temperature - Junction | -40°C ~ 175°C |
|---|