Allgemein
| Basis-Teilenummer | MBR3 |
|---|---|
| Capacitance @ Vr, F | 190pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Through Hole |
| Verpackung | Bulk |
| Teilestatus | Obsolet |
| Technologie | Schottky |

Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 3A C16
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | MBR3 |
|---|---|
| Capacitance @ Vr, F | 190pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Through Hole |
| Verpackung | Bulk |
| Teilestatus | Obsolet |
| Technologie | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 730 mV @ 3 A |
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 600 µA @ 50 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-201AD, Axial |
|---|---|
| Hersteller-Gehäuse | C-16 |
| Operating Temperature - Junction | -40°C ~ 150°C |
|---|