Vishay General Semiconductor - Diodes Division
MODULES IGBT - IAP IGBT
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Konfiguration | Half Bridge Inverter |
|---|---|
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Chassis Mount |
| NTC Thermistor | No |
| Product Status | Active |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 100A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
|---|---|
| Current - Collector (Ic) (Max) | 96 A |
| Current - Collector Cutoff (Max) | 50 µA |
| Power - Max | 259 W |
| Gehäuse | Box |
|---|---|
| Package / Case | Module |
| Hersteller-Gehäuse | INT-A-PAK IGBT |
| Betriebstemperatur | -40°C ~ 175°C (TJ) |
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