Vishay General Semiconductor - Diodes Division
MOSFET N-CH 200V 108A SOT227
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 14mOhm @ 80A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 161 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10720 pF @ 50 V |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Chassis Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Drain-Source-Spannung | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 108A (Tc) |
| Max. Verlustleistung | 405W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | SOT-227-4, miniBLOC |
| Hersteller-Gehäuse | SOT-227 |
| Betriebstemperatur | -55°C~175°C(TJ) |
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