Vishay General Semiconductor - Diodes Division
MOSFET N-CH 200V 287A SOT227
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 200A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16500 pF @ 100 V |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Chassis Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.3V @ 1mA |
| Drain-Source-Spannung | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 287A (Tc) |
| Max. Verlustleistung | 937W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | SOT-227-4, miniBLOC |
| Hersteller-Gehäuse | SOT-227 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|