Allgemein
| Basis-Teilenummer | 1N3890 |
|---|---|
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Chassis, Stud Mount |
| Verpackung | Bulk |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 300 ns |
| Technologie | Standard |

Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 12A DO203AA
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | 1N3890 |
|---|---|
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Chassis, Stud Mount |
| Verpackung | Bulk |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 300 ns |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 12 A |
| Current - Average Rectified (Io) | 12A |
| Current - Reverse Leakage @ Vr | 25 µA @ 100 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-203AA, DO-4, Stud |
|---|---|
| Hersteller-Gehäuse | DO-203AA (DO-4) |
| Operating Temperature - Junction | -65°C ~ 150°C |
|---|