V8PAM10S-M3/I

Name: V8PAM10S-M3/I
Brand: Vishay General Semiconductor - Diodes Division

Analog & Leistungselektronik

DIODE SCHOTTKY 100V 2.8A DO221BC

AktivDO-221BC, SMA Flat Leads Exposed PadAnalog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Capacitance @ Vr, F	600pF @ 4V, 1MHz
Hersteller	Vishay General Semiconductor - Diodes Division
Montageart	Surface Mount
Product Status	Active
Technologie	Schottky

Voltage - DC Reverse (Vr) (Max)	100 V
Voltage - Forward (Vf) (Max) @ If	840 mV @ 8 A
Current - Average Rectified (Io)	2.8A
Current - Reverse Leakage @ Vr	180 µA @ 100 V
Geschwindigkeit	Fast Recovery =< 500ns, > 200mA (Io)

Gehäuse	Tape & Reel (TR) Cut Tape (CT)
Package / Case	DO-221BC, SMA Flat Leads Exposed Pad
Hersteller-Gehäuse	DO-221BC (SMPA)

Grade	Automotive
Operating Temperature - Junction	-40°C ~ 175°C
Qualification	AEC-Q101