Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 120V 3A DO219AB
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | V3FM12 |
|---|---|
| Capacitance @ Vr, F | 220pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Serie | eSMP®, TMBS® |
| Technologie | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 120 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 940 mV @ 3 A |
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 100 µA @ 120 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-219AB |
|---|---|
| Hersteller-Gehäuse | DO-219AB (SMF) |
| Operating Temperature - Junction | -40°C ~ 175°C |
|---|