Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO214AC
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | US1 |
|---|---|
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 75 ns |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-214AC, SMA |
|---|---|
| Hersteller-Gehäuse | DO-214AC (SMA) |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 150°C |
| Qualification | AEC-Q101 |