Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2.9A TO277A
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | SE70 |
|---|---|
| Capacitance @ Vr, F | 76pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) |
| Teilestatus | Discontinued at |
| Reverse Recovery Time (trr) | 2.6 µs |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.05 V @ 7 A |
| Current - Average Rectified (Io) | 2.9A |
| Current - Reverse Leakage @ Vr | 20 µA @ 600 V |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Package / Case | TO-277, 3-PowerDFN |
|---|---|
| Hersteller-Gehäuse | TO-277A (SMPC) |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 175°C |
| Qualification | AEC-Q101 |