Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 3A DO221BC
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | SE30 |
|---|---|
| Capacitance @ Vr, F | 13pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 1.3 µs |
| Serie | eSMP® |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.16 V @ 3 A |
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Package / Case | DO-221BC, SMA Flat Leads Exposed Pad |
|---|---|
| Hersteller-Gehäuse | DO-221BC (SMPA) |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 175°C |
| Qualification | AEC-Q101 |