Allgemein
| Capacitance @ Vr, F | 19pF @ 4V, 1MHz |
|---|---|
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount, Wettable Flank |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.5 µs |
| Technologie | Standard |
Vishay General Semiconductor - Diodes Division
SE30NDHM3/I
DatenblattAnalog & Leistungselektronik
DIODE GEN PURP 200V 3A DFN3820A
Technische Spezifikationen
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
Elektrisch
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 3 A |
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
Mechanisch
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 2-VDFN |
| Hersteller-Gehäuse | DFN3820A |
Umwelt
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 175°C |
| Qualification | AEC-Q101 |