Allgemein
| Capacitance @ Vr, F | 150pF @ 4V, 1MHz |
|---|---|
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 3 µs |
| Technologie | Standard |
Vishay General Semiconductor - Diodes Division
SE20DTJ-M3/I
DatenblattAnalog & Leistungselektronik
DIODE GEN PURP 600V 3.8A SMPD
Technische Spezifikationen
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
Elektrisch
| Voltage - DC Reverse (Vr) (Max) | 600 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 20 A |
| Current - Average Rectified (Io) | 3.8A |
| Current - Reverse Leakage @ Vr | 25 µA @ 600 V |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
Mechanisch
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), Variant |
|---|---|
| Hersteller-Gehäuse | SMPD |
Umwelt
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 175°C |
| Qualification | AEC-Q101 |