Allgemein
| Capacitance @ Vr, F | 160pF @ 4V, 1MHz |
|---|---|
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 330 ns |
| Technologie | Standard |

Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3.9A TO263AC
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Capacitance @ Vr, F | 160pF @ 4V, 1MHz |
|---|---|
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 330 ns |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 20 A |
| Current - Average Rectified (Io) | 3.9A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), Variant |
|---|---|
| Hersteller-Gehäuse | TO-263AC (SMPD) |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 175°C |
| Qualification | AEC-Q101 |