Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO219AB
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | SE10 |
|---|---|
| Capacitance @ Vr, F | 7.5pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 780 ns |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.05 V @ 1 A |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Package / Case | DO-219AB |
|---|---|
| Hersteller-Gehäuse | DO-219AB (SMF) |
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|