Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A DO214AB
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | S8CJ |
|---|---|
| Capacitance @ Vr, F | 79pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 4 µs |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 985 mV @ 8 A |
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Package / Case | DO-214AB, SMC |
|---|---|
| Hersteller-Gehäuse | DO-214AB (SMC) |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 150°C |
| Qualification | AEC-Q101 |