Allgemein
| Basis-Teilenummer | S4PK |
|---|---|
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 2.5 µs |
| Serie | eSMP® |
| Technologie | Standard |
Vishay General Semiconductor - Diodes Division
S4PKHM3_B/I
DatenblattAnalog & Leistungselektronik
DIODE GEN PURP 800V 4A TO277A
Technische Spezifikationen
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
Elektrisch
| Voltage - DC Reverse (Vr) (Max) | 800 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 4 A |
| Current - Average Rectified (Io) | 4A |
| Current - Reverse Leakage @ Vr | 10 µA @ 800 V |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
Mechanisch
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-277, 3-PowerDFN |
| Hersteller-Gehäuse | TO-277A (SMPC) |
Umwelt
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 150°C |
| Qualification | AEC-Q101 |